供应125单晶硅片

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125x125单晶的参数：
Pseudo-square CZ-Si Wafer Specification
Parameters of used monosilicon ingots:
1. Crystal type monocrystalline
2. Growth method CZ
3.Ingot diameter (150 +/-0,5)mm
(Ingots must be surface ground).
4.Type/Dopant P/Boron
5.Orientation (100)+/-3 degree
6. Resitivity: 0.5 – 3 Ohm/cm oder 3-6 Ohm/cm
Resistivity shall be measured on two wafers, which are cut from the top and the bottom of the ingot, using 4-points probe method. Wafers must be thermal donor annealed, ingots are not annealed.
Resistivity is calculated as an average of two ortogonal measurements at central points of wafers. The ingot resistivity range is the difference between resistivity of these two wafers.
7. Carbon: <3x10^16atoms/cc
8. Oxygen: <1x10^18atoms/cc
9. Lifetime: not less than 10 μs
Lifetime is measured in three points on the bottom face of crystal by Shpitzer’s method.
*) these parameters are guaranteed by given raw material.
10. Average dislocation density, cm-3: not more than 100

Parameters of wafers:
1. Pseudosquare’s side: (125 x 125)+/-0,5mm
2. Side orientation <100> +/- 2,5 degree
3. Life time: >=10usec
4. Corner between pseudosquare’s side: (90+/- 0,3) degree
5. Thickness of wafer, measured in the center of wafer: (200 +/-30) μm
6. TTV: not more than 30 μm
TTV is calculated as difference between max. and min. measurements of thickness of the wafer by contact method in 3 points: one – at the center of the wafer and two – at 6 mm from the edge of the wafer.
7. BOW: less than 30 μm
8. Surface (cutting in one side) wire sawed and cleaned
9. Edge chips <1 piece not longer than 1 mm not deeper than 0,8 mm
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