供应6寸单晶硅片

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6寸单晶硅片技术参数
1.Type/类型：P
2.Square side/尺寸：125*125±0.4mm
3.Diameter/直径：Φ150±0.4mm
4.Thickness/厚度： 190±10μm
5.Resistivity/电阻率：1.0–3.0Ω•cm
6.Lifetime/少子寿命≥15μs
7.Oxygen content/氧含量≤1×1018atoms/cm3
8.Carbon content/碳含量≤5×1016atoms/cm3
9.Warp/弯曲度：≤30μm
10.TTV: ≤25μm
11.Etching pit/位错密度：≤1000/cm³
12.Growing orientation/表面、边缘晶向：<100>±1.0
13.Edge defect/崩边：Length/长度≤0.4mm、Depth/深度≤0.8mm，每片不超过2个(no more than 2 per piece wafer)，间隔Space≥30mm
14.Gap/缺口：Length/长度≤1mm、Depth/深度≤0.3mm，每片≤1个(no more than 1 per piece wafer)
15.晶片无裂纹、孔洞和明显刀痕及凹坑
No crack, hole, obvious sawmarks and concave.
（2）6.5寸单晶硅片技术参数
1.Type/类型：P
2.Square side/尺寸：125*125±0.4mm
3.Diameter/直径：Φ165±0.4mm
4.Thickness/厚度： 190±10μm
5.Resistivity/电阻率：1.0–3.0Ω•cm
6.Lifetime/少子寿命≥15μs
7.Oxygen content/氧含量≤1×1018atoms/cm3
8.Carbon content/碳含量≤5×1016atoms/cm3
9.Warp/弯曲度：≤30μm
10.TTV: ≤25μm
11.Etching pit/位错密度：≤1000/cm³
12.Growing orientation/表面、边缘晶向：<100>±1.0
13.Edge defect/崩边：Length/长度≤0.4mm、Depth/深度≤0.8mm，每片不超过2个(no more than 2 per piece wafer)，间隔Space≥30mm
14.Gap/缺口：Length/长度≤1mm、Depth/深度≤0.3mm，每片≤1个(no more than 1 per piece wafer)
15.晶片无裂纹、孔洞和明显刀痕及凹坑
No crack, hole, obvious sawmarks and concave.